Digbijoy N. Nath

Assistant Professor
List of journal publications (based on the work done at IISc, India from 2014-present):
  • Shashwat Rathkanthiwar, Anisha Kalra, N Remesh, A Bardhan, R Muralidharan, Digbijoy N. Nath and Srinivasan Raghavan, “Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”, Journal of Applied Physics, vol. 127, June 2020, pp. 215705
  • Shashwat Rathkanthiwar, Anisha Kalra, R Muralidharan, Digbijoy N. Nath and Srinivasan Raghavan, “Growth of AlN on sapphire: predicting the optimal nucleation density by surface kinetics modeling”, Journal of Applied Physics, vol. 127, May 2020, pp. 205301
  • Nayana Remesh, N Mohan, S Raghavan, R Muralidharan and Digbijoy N Nath, “Optimum carbon concentration in GaN-on-silicon for breakdown enhancement in AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices, Early Access, DOI: 10.1109/TED.2020.2989421
  • Niranjan S., I Guiney, C. J. Humphreys, P Sen, R Muralidhara and Digbijoy N Nath, “Au- free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: study of etch chemistry and metal scheme”, Journal of Vacuum Science & Technology B, vo. 38, April 2020, pp. 032207
  • Usman Ul Muazzam, M S Raghavan, A S Pratiyush, R Muralidharan, S Raghavan, Digbijoy N Nath, S A Shivashankar, “High-responsivity (In 0.26 Ga 0.74 ) 2 O 3 UV detectors on sapphire realized by microwave irradiation-assisted deposition”, Journal of Alloys and Compounds, vol. 828, July 2020, pp. 154337
  • Anisha Kalra, S Rathkanthiwar, R Muralidharan, S Raghavan and Digbijoy N Nath, “Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes”, IOP Semiconductor Science and Technology, vol. 35, No. 3, January 2020, pp. 035001
  • Sandeep Kumar, SB Dolmanan, S Tripathy, R Muralidharan and Digbijoy N Nath, “Deep sub-micron normally-off AlGaN/GaN MOSFET on silicon with V TH > 5V and On Current > 0.5 A/mm”, Physica Status Solidi (A), vol. 217, no. 7, December 2019, Early Access
  • Usman Muazzam, Prasad Chavan, S. Raghavan, R. Muralidharan and Digbijoy N. Nath, “Optical properties of mist-CVD grown α-Ga 2 O 3 ”, IEEE Photonics Technology Letters, vol. 32, No. 7, April 2020, pp. 422-425
  • Roop K Mech, Neha Mohta, Avijit Chatterjee, Shankar Kumar Selvaraja, R Muralidharan, Digbijoy N Nath, “High responsivity and photovoltaic effect based on vertical transport in multilayer α-In2Se3”, Physica Status Solidi (A), vol. 217, no. 5, January 2020, Early Access
  • Sandeep Kumar, SB Dolmanan, S Tripathy, R Muralidharan and Digbijoy N Nath, “Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs”, Physica Status Solidi (A), vol. 217, no. 5, January 2020, Early Access
  • P V K Nittala, N Remesh, S Niranjan, S Tasneem, S Raghavan, R Muralidharan, Digbijoy N Nath, and P Sen, “Enabling transfer of ultra-thin layers of GaN for demonstration of a heterogenous stack on copper heat spreader”, IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 10, no. 2, February 2020, pp. 339-342
  • 12.Nayana Remesh, S Kumar, I Guiney, C. J. Humphreys, S Raghavan, R Muralidharan and Digbijoy N Nath, “A novel technique to investigate the role of traps in the off-state performance of AlGaN/GaN high electron mobility transistors on Si using substrate bias”, Physica Status Solidi (A), vol. 217, no. 7, December 2019, Early Access
  • Sandeep Kumar, Rohith Soman, Anamika Pratiyush, R. Muralidharan and Digbijoy N. Nath, “A performance comparison between β-Ga2O3 and GaN HEMTs”, IEEE Transactions on Electron Devices, vol. 66, no. 8, July 2019, pp. 3310-3317
  • Anisha Kalra, Shashwat Rathkanthiwar, R. Muralidharan, Srinivasan Raghavan and Digbijoy N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency”, IEEE Photonics Technology Letters, vol. 31, no. 15, June 2019, pp. 1237-1240
  • 15.Swanand Solanke, Shashwat Rathkanthiwar, Anisha Kalra, Roop Kumar Mech, Muralidharan Rangarajan, Srinivasan Raghavan and Digbijoy N Nath, “Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and β-In2Se3/GaN”, IOP Semiconductor Science and Technology, vol. 34, no. 7, June 2019, pp. 075020
  • Roop K Mech, Swanand V Solanke, Neha Mohta, Muralidharan Rangarajan, Digbijoy N Nath, “In2Se3 visible/near-IR photodetector with observation of band-edge in spectral response”, IEEE Photonics Technology Letters, vol. 31, no. 11, April 2019, pp.905-908
  • Anamika Singh Pratiyush, Usman Ul Muazzam, Sandeep Kumar, P Vijayakumar, S Ganesamoorthy, N Subramanian, Rangarajan Muralidharan, Digbijoy N Nath, “Optical Float-Zone Grown Bulk β-Ga2O3-based Linear MSM Array of UV-C Photodetectors”, IEEE Photonics Technology Letters, vol. 31, no. 12, April 2019, pp. 923-926
  • S. Kumar, A. Pratiyush, S. B. Dolmanan, Hui Ru Tan, S. Tripathy, R. Muralidharan, Digbijoy N Nath, “Optically coupled, electrically isolated, monolithically integrated switch using AlGaN/GaN high electron mobility transistor structures on silicon”, ACS Applied Electronic Materials, vol. 1, no. 3, February 2019, pp 340–345
  • S. Kumar, H. Kumar, S. Vura, A. Pratiyush, V. Sai Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, Digbijoy N. Nath, “Investigation of Ta2O5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on silicon”, IEEE Transactions on Electron Devices, vol. 66, no. 3, January 2019, pp. 1230-1235
  • N. Remesh, N. Mohan, S. Kumar, S. Prabhu, I. Guiney, C. Humphreys, S. Raghavan, R. Muralidharan, Digbijoy N. Nath, “Vertical current transport in AlGaN/GaN HEMTs on silicon: Experimental investigation and analytical model”, IEEE Transactions on Electron Devices, vol. 66, no. 1, December 2018, pp. 613-618
  • A. S. Pratiyush, Z. Xia, S. Kumar, Y. Zhang, C. Joishi, R. Muralidharan, S. Rajan, Digbijoy N. Nath, “MBE-grown β-Ga2O3 based Schottky UV-C photodetectors with rectification ratio > 107”, IEEE Photonics Technology Letters, vol. 30, no. 23, pp. 2025-2028, October 2018, pp. 2025-2028
  • R. Soman, M. Sharma, N Ramesh, Digbijoy Nath, KN Bhat, S Raghavan, N Bhat, “Buried channel normally-off AlGaN/GaN MOS-HEMT with a pn junction in GaN buffer”, Semiconductor Science and Technology, vol. 33, no. 9, August 2018, pp. 095006
  • A. S. Pratiyush, S. Krishnamoorthy, S. Kumar, Z. Xia, R. Muralidharan, S. Rajan, Digbijoy N. Nath, “Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector”, Japanese Journal of Applied Physics, vol. 57, no. 6, May 2018, pp. 060313
  • A. Kalra, S. Vura, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, Digbijoy N. Nath “Demonstration of high responsivity epitaxial β-Ga2O3/GaN metal-heterojunction-metal (MHM) broadband UV-A/UV-C detector”, Applied Physics Express, vol. 11, no. 6, April 2018, pp. 064101
  • P. Jaiswal, U. Muazzam, A. S. Pratiyush, N. Mohan, S. Raghavan, R. Muralidharan, S. A. Shivashankar, Digbijoy N. Nath, “Microwave irradiation assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics”, Applied Physics Letters, vol. 112, no. 2, January 2018, pp. 021105
  • S. Rathkanthiwar, A. Kalra, R. Muralidharan. Digbijoy N. Nath, S. Raghavan, “Analysis of screw dislocated mediated dark current in Al0.50Ga0.50N solar-blind metal semiconductor metal photodetectors” Journal of Crystal Growth, vol. 498, September 2018, pp. 35-42
  • H. Chandrasekar, S. Kumar, K. L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, K. N. Bhat, S. Mohan, R. Muralidharan, N. Bhat, Digbijoy N. Nath, “Dielectric engineering of HfO2 gate stack towards normally-on and normally-off GaN HEMTs on silicon” IEEE Transactions on Electron Devices, vol. 65, no. 9, August 2018, pp. 3711-3718
  • V K Singh, Digbijoy N. Nath, “Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors”, Physica Status Solidi (A), vol. 215, no. 2, January 2018, pp. 1700757
  • A. S. Pratiyush, S. Krishnamoorthy, S. V. Solanke, Z. Xia, R. Muralidharan, S. Rajan, Digbijoy N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector”, Applied Physics Letters, vol. 110, no. 22, May 2017, pp. 221107
  • S. Rathkanthiwar, A. Kalra, S V Solanke, N Mohta, R Muralidharan, S Raghavan, Digbijoy N. Nath, “Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors”, Journal of Applied Physics, vol. 121 no. 16, April 2017, pp.164502
  • S. Kumar, N. Remesh, S. B. Dolmanan, S. Tripathy, S. Raghavan, R. Muralidharan, Digbijoy N. Nath, “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 nm Si”, Solid-State Electronics, vol. 137, November 2017, pp. 117-122
  • S. Kumar, P. Gupta, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, Digbijoy N. Nath, “Temperature and bias dependent trap capture cross section in AlGaN/GaN HEMT on 6-in silicon with Carbon-doped buffer”, IEEE Transactions of Electron Devices, vol. 64, no. 12, October 2017, pp. 4868-4874
  • B. K. Bharadwaj, Digbijoy N. Nath, R. Pratap, S. Raghavan, “Making consistent contacts to graphene: effect of architecture and growth induced defects”, IOP Nanotechnology, vol. 27, no. 20, April 2016
  • 35.BK Bharadwaj, H Chandrasekar, Digbijoy N. Nath, R Pratap, S Raghavan, “Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density” Journal of Physics D: Applied Physics, vol. 49, no. 26, May 2016, pp. 265301
  • 36.S Bhattacharjee, KL Ganapathi, Digbijoy N. Nath, N Bhat, “Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability” IEEE Transactions on Electron Devices, vol. 63, no. 6, April 2016, pp. 2556-2562
  • H. Chandrasekar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat, Digbijoy N. Nath, “Optical-phonon limited high-field transport in layered materials”, IEEE Transactions on Electron Devices, vol. 63, no. 2, December 2015, pp. 767-772
  • S. Bhattacharjee, K. L. Ganapathi, Digbijoy N. Nath, N. Bhat, “Intrinsic limit for contact resistance in exfoliated multi-layered MoS2 FET”, IEEE Electron Device Letters, vol. 37, no. 1, Nov 2015, pp. 119-122
  • Hareesh Chadrasekar, Digbijoy N. Nath, “Electron mobility in few-layer MoxW1-xS2”, IOP Materials Research Express, vol. 2, no. 9, Sept 2015, pp. 095007
List of journal publications (based on the work done abroad, prior to joining IISc, 2008 to 2014)
  • Z Yang, Y Zhang, S Krishnamoorthy, D N Nath, JB Khurgin, S Rajan, “Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter” Applied Physics Letters, vol. 108 (19), 192101 (2016)
  • Z. C. Yang, Digbijoy N Nath, Y. Zhang, J. B. Khurgin, S. Rajan, “Common Emitter Current and Voltage Gain in III-Nitride Tunnelling Hot Electron Transistors”, IEEE Electron Device Letters, 36, 436-438 (2015)
  • 3.P. S. Park, S. Krishnamoorthy, S. Bajaj, Digbijoy N Nath, and S. Rajan, “Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs”, IEEE Electron Device Letters, 36, Issue 3, 226-228 (2015)
  • Z. Yang, Y. Zhang, D.N. Nath, J.B. Khurgin, S. Rajan, “Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier”, Applied Physics Letters 106 (3), 032101 (2015)
  • S. Bajaj, T.-H. Hung, F. Akyol, Digbijoy N Nath, S. Rajan, “Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage”, Applied Physics Letters 105 (26), 263503 (2014)
  • Z. Yang, Digbijoy N Nath and S. Rajan, “Negative differential resistance in GaN tunneling hot electron transistors”, Applied Physics Letters 105 (20), 202111 (2014)
  • E.W. Lee II, L. Ma, Digbijoy N Nath, C.H. Lee, A. Arehart, Y. Wu, S. Rajan, “Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions”, Applied Physics Letters 105 (20), 203504 (2014)
  • L. Ma, Digbijoy N Nath, E.W. Lee II, C.-H. Lee, M. Yu, A. Arehart, S. Rajan, Y Wu, “Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2V−1s−1”, Applied Physics Letters 105 (7), 072105 (2014)
  • Masihhur R Laskar, Digbijoy N Nath, Lu Ma, Edwin W Lee II, Choong Hee Lee, Thomas Kent, Zihao Yang, Rohan Mishra, Manuel A Roldan, Juan-Carlos Idrobo, Sokrates T Pantelides, Stephen J Pennycook, Roberto C Myers, Yiying Wu and Siddharth Rajan, “p-type doping of MoS2 thin films using Nb”, Applied Physics Letters 104 (9), 092104 (2014)
  • T.-H. Hung, K. Sasaki, A. Kuramata, Digbijoy N Nath, P.S. Park, C. Polchinski and S. Rajan, “Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3”, Applied Physics Letters 104 (16), 162106
  • T.-H. Hung, P.S. Park, S. Krishnamoorthy, Digbijoy N Nath, S. Rajan, “Interface charge engineering for enhancement-mode GaN MISHEMTs”, Electron Device Letters, IEEE 35 (3), 312-314 (2014)
  • J. Yang, S. Cui, T.P. Ma, T.-H. Hung, Digbijoy N Nath, S. Krishnamoorthy and S. Rajan, “Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors”, Applied Physics Letters 103 (22), 223507 (2013)
  • Jie Yang, Sharon Cui, T.P. Ma, Ting-Hsiang Hung, Digbijoy N. Nath, Sriram Krishnamoorthy and Siddharth Rajan, “A study of electrically active traps in AlGaN/GaN HEMTs”, Applied Physics Letters, 103 (17), 173520 (2013)
  • Digbijoy N. Nath, C.-Y. Lee, Zhichao Yang, Pil Sung Park, Y.-R. Wu and Siddharth Rajan, “Unipolar vertical transport characteristics in GaN/AlGaN/GaN heterostructures”, Applied Physics Letters, 103, 022102 (2013)
  • Masihhur R. Laskar, Lu Ma, ShanthaKumar K, Pil Sung Park, Sriram Krishnamoorthy, Edwin Lee II, Ye Shao, Digbijoy N. Nath, Wu Lu, Yiying Wu and Siddharth Rajan, “Large area single crystal (0001) oriented MoS2”, Applied Physics Letters, 102, 252108 (2013)
  • Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath, Nitin P. Padture and Siddharth Rajan, “Ohmic contact formation between metal and AlGaN/GaN heterostructures via grapheme insertion”, Applied Physics Letters, 102, 153501 (2013)
  • Ting-Hsiang Hung, Sriram Krishnamoorthy, Michele Esposto, Digbijoy N. Nath, Pil Sung Park and Siddharth Rajan, “Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”, Applied Physics Letters. 102, 072105 (2013)
  • Digbijoy N. Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K. Mishra and Siddharth Rajan, “Polarization Engineered 1-dimensional Electron Gas Arrays”, Journal of Applied Physics, 111, 043715 (2012)
  • Fatih Akyol, Digbijoy N. Nath, Sriram Krishnamoorthy, Pil Sung Park and Siddharth Rajan, "Suppression of Electron Overflow and Efficiency Droop in N-polar GaN Green LEDs", Applied Physics Letters, 100, 111118 (2012)
  • Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy and Siddharth Rajan, “Electron Gas Dimensionality Engineering in AlGaN/GaN HEMTs using Polarization", Applied Physics Letters, 100, 063507 (2012)
  • 21.Pil Sung Park, Digbijoy N. Nath and Siddharth Rajan, "Demonstration of negative quantum capacitance in N-polar AlGaN/GaN HEMT", IEEE Electron Device Letters, 33, No. 7 (2012)
  • Hyeongnam Kim, Digbijoy N. Nath, Wu Lu and Siddharth Rajan, "Polarization-Engineered GaN-based Heterostructure for Normally-Off High Electron Mobility Transistors", Journal of Electronics Materials, s11664-012-2109-3 (2012)
  • Digbijoy N. Nath, Emre Gur, Steven A. Ringel and Siddharth Rajan, “Growth Model for Plasma-assisted Molecular Beam Epitaxy of N-polar and Ga-polar InxGa1-xN”, Journal of Vacuum Science and Technology B 29(2), 021206 (2011)
  • Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath, Sanyam Bajaj, Ting-Hsiang Hung and Siddharth Rajan, "Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride", Applied Physics Letters, 99, 133503 (2011)
  • Fatih Akyol, Digbijoy N. Nath, Emre Gur, Pil Sung Park, Steven A. Ringel and Siddharth Rajan, “N-polar III-Nitride Green (540 nm) Light Emitting Diode”, Japanese Journal of Applied Physics, B 50, 052101 (2011)
  • Digbijoy N. Nath, Eric Hsieh, Stacia Keller, Steven DenBaars, Umesh K. Mishra and Siddharth Rajan, “Electron Transport in Vicinal N-polar AlGaN/GaN heterostructures”, Applied Physics Letters, 97, 162106 (2010)
  • Digbijoy N. Nath, Emre Gur, Steven A. Ringel and Siddharth Rajan, “Molecular Beam Epitaxy of N-polar InGaN”, Applied Physics Letters, 97, 071903 (2010)
  • Sriram Krishnamoorthy, Digbijoy N. Nath, Fatih Akyol, Pil Sung Park, Michele Esposto and Siddharth Rajan, “Polarization-engineered GaN/InGaN/GaN Tunnel Diode”, Applied Physics Letters 97, 203502 (2010)
List of conference presentations (based on the work done at IISc, India from 2014-present):
  • A. Kalra, S. Rathkanthiwar, S. Vura, R. Muralidharan, S. Raghavan, and D. N. Nath, “Hybrid β-Ga2O3/AlGaN Schottky Barrier Diodes for Broadband Deep-Ultraviolet Optoelectronics”, 61st Electronic Materials Conference, Ann Arbor, Michigan, USA. 2019
  • A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Record High Zero-Bias External Quantum Efficiency of 92 % for Al0.40Ga0.60N-Based p-i-n UV Detectors”, 61st Electronic Materials Conference, Ann Arbor, Michigan, USA. 2019
  • A. Kalra, S. Rathkanthiwar, S. Vura, R. Muralidharan, S. Raghavan, and D. N. Nath, “Epitaxial β-Ga2O3/Al0.45Ga0.55N Heterojunction-Based Schottky Barrier Diodes for Room and High-Temperature Broadband Deep-Ultraviolet Optoelectronics”, 13th International Conference on Nitrides Semiconductors (ICNS 2019), Seattle, Washington, USA.
  • A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-Grading in p-AlGaN to Realize Record High Zero-Bias External Quantum Efficiency of 88% for Al0.40Ga0.60N-Based p-i-n UV Detectors”, 13th International Conference on Nitrides Semiconductors (ICNS 2019), Seattle, Washington, USA. 
  • A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Back-illuminated Al0.40Ga0.60N p-i-n UV detector with 67% zero-bias external quantum efficiency”, International Conference on Emerging Electronics (ICEE 2018), Bangalore, India.
  • A. Kalra, S. Rathkanthiwar, S. Vura, R. Muralidharan, S. Raghavan, and D. N. Nath, “Hybrid β-Ga2O3/AlGaN Schottky Barrier Diodes for broadband deep-ultraviolet optoelectronics”, International Conference on Emerging Electronics (ICEE 2018), Bangalore, India.
  • A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Back-illuminated Al0.40Ga0.60N p-i-n UV detector with 67% zero-bias external quantum efficiency”, International Workshop on Nitride Semiconductors (IWN 2018), November 2018, Kanazawa, Japan.
  • A. Kalra, S. Vura, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Broadband UV sensing utilizing epitaxial β-Ga2O3/GaN heterojunction”, International Workshop on Nitride Semiconductors (IWN 2018), November 2018, Kanazawa, Japan.
  • A. Kalra, S. Rathkanthiwar, S. Vura, R. Muralidharan, S. Raghavan, and D. N. Nath, “Hybrid β-Ga2O3/AlGaN Schottky Barrier Diodes for broadband deep-ultraviolet optoelectronics”, International Workshop on Nitride Semiconductors (IWN 2018), November 2018, Kanazawa, Japan.
  • A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Self-powered AlGaN UV photodetectors with 67
© 2020 Digbijoy N. Nath