Digbijoy N. Nath

Assistant Professor


Digbijoy N. Nath is an assistant professor at Centre for Nano Science & Engineering, Indian Institute of Science, Bangalore. Prior to joining CeNSE, he completed his PhD at Ohio State University, Columbus in the Department of Electrical Engineering and his B.E. at Birla Institute of Technology & Science (BITS), Pilani in Electrical & Electronics Engineering Department.

  • Research

Digbijoy’s research is primarily on wide band gap materials and heterostructure devices for high-power, high-speed electronics and deep-UV opto-electronics. The work is highly collaborative & inter-disciplinary in nature and involves engineering materials as well as energy band landscape toward high-performance devices and/or trying to understand the science behind processes which prevent wide band gap devices from reaching their full potential.

  • Publication
  • Shashwat Rathkanthiwar, Anisha Kalra, N Remesh, A Bardhan, R Muralidharan, Digbijoy N. Nath and Srinivasan Raghavan, “Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”, Journal of Applied Physics, vol. 127, June 2020, pp. 215705
  • Shashwat Rathkanthiwar, Anisha Kalra, R Muralidharan, Digbijoy N. Nath and Srinivasan Raghavan, “Growth of AlN on sapphire: predicting the optimal nucleation density by surface kinetics modeling”, Journal of Applied Physics, vol. 127, May 2020, pp. 205301
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  • Physica Status Solidi (a) is featuring an image from Neha et al's work "Artificial Synapse based on back-gated MoS2 FET with high-k Ta2O5 dielectric" on the front cover of Issue 19. Congrats to Neha &

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  • Dr. Digbijoy N Nath conferred INAE Young Engineer Award, 2020

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© 2020 Digbijoy N. Nath